RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DQKD1A08 1GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Compare
A-DATA Technology DQKD1A08 1GB vs Micron Technology 4ATF1G64HZ-3G2E2 8GB
Overall score
A-DATA Technology DQKD1A08 1GB
Overall score
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DQKD1A08 1GB
Report a bug
Faster reading speed, GB/s
2
15.8
Average value in the tests
Reasons to consider
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Report a bug
Below the latency in the PassMark tests, ns
49
52
Around -6% lower latency
Faster write speed, GB/s
11.0
1,145.9
Average value in the tests
Higher memory bandwidth, mbps
25600
4200
Around 6.1 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology DQKD1A08 1GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
52
49
Read speed, GB/s
2,614.5
15.8
Write speed, GB/s
1,145.9
11.0
Memory bandwidth, mbps
4200
25600
Other
Description
PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
4-4-4-12 / 533 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
409
2534
A-DATA Technology DQKD1A08 1GB RAM comparisons
SK Hynix HYMP125U64CP8-S6 2GB
Samsung M4 70T2864AZ3-CE6 1GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB RAM comparisons
Samsung M393B1K70CH0-CH9 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Golden Empire 1GB DDR2 800 CAS=4 1GB
Gold Key Technology Co Ltd NMUD480E86-3200 8GB
Hexon Technology Pte Ltd HEXON 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
Kingston ACR16D3LS1KNG/4G 4GB
SK Hynix HMA81GS6CJR8N-XN 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Golden Empire CL16-18-18 D4-2666 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Ramaxel Technology RMSA3260MH78H8H-2666 8GB
Samsung M378A1K43EB2-CWE 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Kingston 99U5474-010.A00LF 2GB
Kingston XW21KG-HYD-NX 8GB
Kingston 9905458-017.A01LF 4GB
Samsung M391A1K43BB2-CTD 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-3733C17-16GTZKK 16GB
Crucial Technology CT25664BA160B.C16F 2GB
Apacer Technology 78.C1GMW.AZC0B 8GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Samsung M391A1K43BB2-CTD 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-2666C15-8GRR 8GB
A-DATA Technology DOVF1B163G2G 2GB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
Report a bug
×
Bug description
Source link