RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DQVE1908 512MB
Panram International Corporation PUD42400C154G2NJW 4GB
Compare
A-DATA Technology DQVE1908 512MB vs Panram International Corporation PUD42400C154G2NJW 4GB
Overall score
A-DATA Technology DQVE1908 512MB
Overall score
Panram International Corporation PUD42400C154G2NJW 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DQVE1908 512MB
Report a bug
Faster reading speed, GB/s
2
13.7
Average value in the tests
Reasons to consider
Panram International Corporation PUD42400C154G2NJW 4GB
Report a bug
Below the latency in the PassMark tests, ns
26
66
Around -154% lower latency
Faster write speed, GB/s
10.2
1,557.9
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology DQVE1908 512MB
Panram International Corporation PUD42400C154G2NJW 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
66
26
Read speed, GB/s
2,775.5
13.7
Write speed, GB/s
1,557.9
10.2
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
382
2594
A-DATA Technology DQVE1908 512MB RAM comparisons
Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB
Panram International Corporation PUD42400C154G2NJW 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HYMP512S64CP8-Y5 1GB
Wilk Elektronik S.A. W-HK26S16G 16GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMD32GX4M2B3466C16 16GB
Kingston KHX318C10FR/8G 8GB
INTENSO 5641152 4GB
Corsair CMD8GX3M2A2933C12 4GB
Kingston ACR26D4S9D8ME-16 16GB
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F4-4000C19-8GTZSW 8GB
Samsung M378T5663QZ3-CF7 2GB
Corsair CMK16GX4M2B3600C18 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Corsair CMK16GX4M1A2666C16 16GB
A-DATA Technology VDQVE1B16 2GB
Samsung M471A1K43CBCBCRC 8GB
A-DATA Technology DQVE1908 512MB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N
Micron Technology 16JSF25664HZ-1G1F1 2GB
G Skill Intl F4-2400C15-4GRK 4GB
Kingston KVR533D2N4 512MB
Crucial Technology BLS8G4D30AESEK.M8FE1 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMW64GX4M2E3200C16 32GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology BLS8G4D26BFSB.16FE 8GB
Report a bug
×
Bug description
Source link