RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
AMD R534G1601U1S-UO 4GB
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
Compare
AMD R534G1601U1S-UO 4GB vs Gloway International Co. Ltd. TYA4U2400D17081C 8GB
Overall score
AMD R534G1601U1S-UO 4GB
Overall score
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
AMD R534G1601U1S-UO 4GB
Report a bug
Reasons to consider
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
Report a bug
Below the latency in the PassMark tests, ns
24
27
Around -13% lower latency
Faster reading speed, GB/s
17.1
14.7
Average value in the tests
Faster write speed, GB/s
12.8
9.2
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
AMD R534G1601U1S-UO 4GB
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
24
Read speed, GB/s
14.7
17.1
Write speed, GB/s
9.2
12.8
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2272
3257
AMD R534G1601U1S-UO 4GB RAM comparisons
AMD R534G1601U1S 4GB
Samsung M378B5273CH0-CH9 4GB
Gloway International Co. Ltd. TYA4U2400D17081C 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70QB0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905403-011.A03LF 2GB
Kingston HX421C14FB/4 4GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Samsung M471A1K1KCB1-CRC 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Smart Modular SF4722G4CKHH6DFSDS 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M393A2K43BB1-CRCA1 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Apacer Technology GD2.1527WC.001 8GB
Samsung M386B4G70DM0-CMA4 32GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
A-DATA Technology AX4S2800316G18-B 16GB
Kingston KHX3000C15/16GX 16GB
Kingston KHX16LC9/8GX 8GB
Corsair CMR32GX4M4C3466C16 8GB
SK Hynix HMT325S6CFR8C-H9 2GB
Corsair CMD64GX4M8B3200C16 8GB
Kingston KVR533D2N4 512MB
SK Hynix HMA451U6AFR8N-TF 4GB
Samsung M471B5773DH0-CH9 2GB
G Skill Intl F4-3866C18-8GTZ 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Kingston KVR800D2N6/2G 2GB
Corsair CMD16GX4M4B2133C10 4GB
Report a bug
×
Bug description
Source link