RAM comparison Asgard VMA45UG-MEC1U2AW1 8GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Asgard VMA45UG-MEC1U2AW1 8GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Overall score

Asgard VMA45UG-MEC1U2AW1 8GB

Overall score

Differences Specifications Comments

Reasons to consider
Asgard VMA45UG-MEC1U2AW1 8GB

Reasons to consider
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Below the latency in the PassMark tests, ns

31 47

Around -52% lower latency
Faster reading speed, GB/s

20.5 11.8

Average value in the tests
Faster write speed, GB/s

15.5 9.2

Average value in the tests
Higher memory bandwidth, mbps

25600 19200

Around 1.33 higher bandwidth

Complete list of technical specifications

Asgard VMA45UG-MEC1U2AW1 8GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Main characteristics

Other

Description

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)

2323 3649

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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