RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
ASint Technology SSA302G08-EGN1C 4GB
Crucial Technology CT16G4SFD824A.C16FBR 16GB
Compare
ASint Technology SSA302G08-EGN1C 4GB vs Crucial Technology CT16G4SFD824A.C16FBR 16GB
Overall score
ASint Technology SSA302G08-EGN1C 4GB
Overall score
Crucial Technology CT16G4SFD824A.C16FBR 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
ASint Technology SSA302G08-EGN1C 4GB
Report a bug
Below the latency in the PassMark tests, ns
26
35
Around 26% lower latency
Reasons to consider
Crucial Technology CT16G4SFD824A.C16FBR 16GB
Report a bug
Faster reading speed, GB/s
14.5
12.6
Average value in the tests
Faster write speed, GB/s
10.6
9.5
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
ASint Technology SSA302G08-EGN1C 4GB
Crucial Technology CT16G4SFD824A.C16FBR 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
35
Read speed, GB/s
12.6
14.5
Write speed, GB/s
9.5
10.6
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2174
2664
ASint Technology SSA302G08-EGN1C 4GB RAM comparisons
Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Crucial Technology CT16G4SFD824A.C16FBR 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5273EB0-CK0 4GB
AMD R744G2400U1S-UO 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Patriot Memory (PDP Systems) PSD432G32002S 32GB
Samsung M471B5273EB0-CK0 4GB
Wilk Elektronik S.A. IR2400D464L17S/4G 4GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Kingston KHX3200C18D4/8G 8GB
Super Talent F24SB8GH 8GB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-2400C15-16GTZR 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Apacer Technology 78.BAGM6.40C0B 4GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology BL8G32C16U4W.M8FE 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
Samsung M471B5673FH0-CF8 2GB
Apacer Technology 78.C2GF6.AU20B 8GB
ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-2133C15-4GFX 4GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Crucial Technology BL8G26C16U4B.8FD 8GB
Samsung M3 78T2953EZ3-CF7 1GB
V-GEN D4H8GL32A8TS 8GB
AMD AE34G2139U2 4GB
Essencore Limited KD48GS481-26N1600 8GB
Report a bug
×
Bug description
Source link