RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F2-5300CL4-1GBSA 1GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
Compare
G Skill Intl F2-5300CL4-1GBSA 1GB vs Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
Overall score
G Skill Intl F2-5300CL4-1GBSA 1GB
Overall score
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F2-5300CL4-1GBSA 1GB
Report a bug
Faster reading speed, GB/s
4
18.2
Average value in the tests
Reasons to consider
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
52
Around -79% lower latency
Faster write speed, GB/s
15.9
1,479.2
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F2-5300CL4-1GBSA 1GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
52
29
Read speed, GB/s
4,226.4
18.2
Write speed, GB/s
1,479.2
15.9
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 4
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
590
3866
G Skill Intl F2-5300CL4-1GBSA 1GB RAM comparisons
G Skill Intl F2-5300PHU1-1GBSA 1GB
Crucial Technology CT8G4DFD824A.C16FHP 8GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB RAM comparisons
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-2400C16-4GRS 4GB
SK Hynix HMT325U6CFR8C-PB 2GB
Corsair CMK16GX4M2A2666C18 8GB
Kingston KVR533D2N4 512MB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT8G4DFS8266.K8FB 8GB
Kingston KHX2400C11D3/4GX 4GB
Samsung T471A1K43CB1-CRC 8GB
Samsung M391B5673FH0-CH9 2GB
Apacer Technology 78.DAGRL.4050C 16GB
AMD R5S38G1601U2S 8GB
Crucial Technology BL16G32C16U4BL.M16FE 16GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3600C16-8GTZKK 8GB
A-DATA Technology AD73I1B1672EG 2GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingmax Semiconductor FLGF65F-D8K3B 4GB
Corsair CML8GX3M2A1866C9 4GB
A-DATA Technology AO2P21FC4R1-BRFS 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Corsair CMT64GX4M4C3466C16 16GB
Apacer Technology 75.A73AA.G03 2GB
Inmos + 256MB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Corsair CMD128GX4M8A2400C14 16GB
Report a bug
×
Bug description
Source link