RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F4-4000C14-16GTZR 16GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
Compare
G Skill Intl F4-4000C14-16GTZR 16GB vs Micron Technology 8ATF51264AZ-2G1B1 4GB
Overall score
G Skill Intl F4-4000C14-16GTZR 16GB
Overall score
Micron Technology 8ATF51264AZ-2G1B1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F4-4000C14-16GTZR 16GB
Report a bug
Faster reading speed, GB/s
24
15.8
Average value in the tests
Faster write speed, GB/s
20.0
11.8
Average value in the tests
Reasons to consider
Micron Technology 8ATF51264AZ-2G1B1 4GB
Report a bug
Specifications
Complete list of technical specifications
G Skill Intl F4-4000C14-16GTZR 16GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
29
29
Read speed, GB/s
24.0
15.8
Write speed, GB/s
20.0
11.8
Memory bandwidth, mbps
17000
17000
Other
Description
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
4156
2711
G Skill Intl F4-4000C14-16GTZR 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
Micron Technology 8ATF51264AZ-2G1B1 4GB RAM comparisons
Samsung M393B2G70BH0-CK0 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
PUSKILL DDR3 1600 8G 8GB
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Avant Technology W6451U67J7240NB 4GB
Smart Modular SG564568FG8N6KF-Z2 2GB
SK Hynix HMA81GU6JJR8N-VK 8GB
Apacer Technology 78.01GA0.9K5 1GB
G Skill Intl F4-3466C18-8GSXW 8GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3400C16-4GRBD 4GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMW16GX4M2K4000C19 8GB
AMD R5S38G1601U2S 8GB
Micron Technology 36ASF2G72LZ-2G1A1 16GB
Samsung M378B5273CH0-CH9 4GB
GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-3000C15-8GVKB 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Samsung M386A8K40CM2-CRC 64GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMW16GX4M2Z3200C16 8GB
Report a bug
×
Bug description
Source link