RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Golden Empire 1GB DDR2 800 CAS=4 1GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
Compare
Golden Empire 1GB DDR2 800 CAS=4 1GB vs Team Group Inc. TEAMGROUP-ED4-2400 16GB
Overall score
Golden Empire 1GB DDR2 800 CAS=4 1GB
Overall score
Team Group Inc. TEAMGROUP-ED4-2400 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Golden Empire 1GB DDR2 800 CAS=4 1GB
Report a bug
Below the latency in the PassMark tests, ns
49
85
Around 42% lower latency
Faster reading speed, GB/s
4
13.2
Average value in the tests
Reasons to consider
Team Group Inc. TEAMGROUP-ED4-2400 16GB
Report a bug
Faster write speed, GB/s
9.2
2,066.5
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Golden Empire 1GB DDR2 800 CAS=4 1GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
49
85
Read speed, GB/s
4,577.1
13.2
Write speed, GB/s
2,066.5
9.2
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
737
1838
Golden Empire 1GB DDR2 800 CAS=4 1GB RAM comparisons
Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB RAM comparisons
Kingston 9905471-002.A00LF 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HYMP125S64CP8-S6 2GB
Samsung M378A2G43AB3-CWE 16GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
G Skill Intl F4-3600C18-16GVK 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4000C18-32GVK 32GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
SK Hynix HMT41GS6AFR8A-PB 8GB
Crucial Technology BLS16G4D32AESC.M16FE 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BL8G32C16S4B.M8FE 8GB
Hexon Technology Pte Ltd HEXON 1GB
Apacer Technology 78.CAGRN.40C0B 8GB
Kingston 9905403-011.A03LF 2GB
Kingston HP32D4U8S8ME-8XR 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
SK Hynix HMA82GR7AFR4N-TF 16GB
Samsung M378B5673FH0-CH9 2GB
Samsung M471A4G43AB1-CWE 32GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston 9905625-029.A00G 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
Samsung 1600 CL10 Series 8GB
AMD R744G2400U1S-UO 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3600C18-16GTRS 16GB
Report a bug
×
Bug description
Source link