RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Kingmax Semiconductor GLLF62F-C6---------- 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Overall score
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Report a bug
Reasons to consider
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Report a bug
Below the latency in the PassMark tests, ns
23
28
Around -22% lower latency
Faster reading speed, GB/s
17
12.4
Average value in the tests
Faster write speed, GB/s
13.2
9.6
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
23
Read speed, GB/s
12.4
17.0
Write speed, GB/s
9.6
13.2
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2329
2935
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM comparisons
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Micron Technology 18ASF2G72AZ-2G3B1 16GB
Kingston ACR256X64D3S1333C9 2GB
Samsung M471B5773DH0-CH9 2GB
Crucial Technology CT51264BD1339.M16F 4GB
Samsung M393A1G40EB1-CPB 8GB
Kingston 9965525-018.A00LF 4GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
Samsung M4 70T5663CZ3-CE6 2GB
SK Hynix HMA851U6DJR6N-XN 4GB
AMD AE34G1601U1 4GB
Samsung M378A2G43BB3-CWE 16GB
Kingston 9965516-430.A00G 16GB
Kingston 9905624-025.A00G 8GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-2133C15-8GNS 8GB
Samsung M3 78T2863QZS-CF7 1GB
Corsair CM4X8GF3000C15K4 8GB
Corsair CML8GX3M2A1600C9 4GB
Heoriady M378A1K43BB2-CTD 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Apacer Technology 78.D2GF2.4010B 16GB
AMD AE34G2139U2 4GB
Crucial Technology BL8G26C16U4B.8FD 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMK64GX4M4B3000C15 16GB
Report a bug
×
Bug description
Source link