RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
G Skill Intl F4-2666C18-4GFX 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB vs G Skill Intl F4-2666C18-4GFX 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Overall score
G Skill Intl F4-2666C18-4GFX 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
74
Around 61% lower latency
Reasons to consider
G Skill Intl F4-2666C18-4GFX 4GB
Report a bug
Faster reading speed, GB/s
15.4
12.1
Average value in the tests
Faster write speed, GB/s
8.6
7.8
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
G Skill Intl F4-2666C18-4GFX 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
74
Read speed, GB/s
12.1
15.4
Write speed, GB/s
7.8
8.6
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 9 11 13 15 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2177
1849
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB RAM comparisons
G Skill Intl F3-12800CL9-4GBRL 4GB
Avant Technology W644GU44J2320NH 32GB
G Skill Intl F4-2666C18-4GFX 4GB RAM comparisons
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5673FH0-CF8 2GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
Samsung M393B5170FH0-CK0 4GB
Avant Technology W6451U66J5213ND 4GB
Kingston KP4T2F-PSB 4GB
Kingston X74R9W-MIE 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
Kingston ACR512X64D3S13C9G 4GB
Smart Modular SMS4TDC3C0K0446SCG 4GB
Samsung M4 70T5663CZ3-CE6 2GB
G Skill Intl F4-3300C16-16GTZ 16GB
G Skill Intl F3-1333C9-4GIS 4GB
Essencore Limited KD48GS88J-26N1900 8GB
Samsung M471B5273EB0-CK0 4GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
Kingston KVR533D2N4 512MB
Corsair CM4X16GE2666Z16K4 16GB
Crucial Technology BLT4G3D1337DT1TX0. 4GB
G Skill Intl F4-2800C15-4GTZ 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Avant Technology W6451U67J5213NB 4GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Team Group Inc. Team-Elite-2400 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 16ATF4G64HZ-2G6B2 32GB
Kingston 9965525-018.A00LF 4GB
OCMEMORY OCM3200CL16D-16GBN 8GB
Report a bug
×
Bug description
Source link