RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Overall score
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Report a bug
Reasons to consider
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Report a bug
Below the latency in the PassMark tests, ns
22
29
Around -32% lower latency
Faster reading speed, GB/s
17.3
13.4
Average value in the tests
Faster write speed, GB/s
13.7
9.0
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
22
Read speed, GB/s
13.4
17.3
Write speed, GB/s
9.0
13.7
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 12 14 15
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2423
3051
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB RAM comparisons
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung 1600 CL10 Series 8GB
Kingston 9905663-016.A00G 16GB
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F4-3200C16-16GTZRX 16GB
Samsung M393B2G70BH0-CK0 16GB
Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology CT16G4SFD8213.C16FH1 16GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-3300C16-16GTZKW 16GB
Kingston KHX1600C9S3L/4G 4GB
INTENSO 5641152 4GB
Team Group Inc. Team-Value-800 2GB
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
AMD AE34G1601U1 4GB
Crucial Technology BLS8G4D32AESCK.M8FE1 8GB
ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-3200C14-8GTZSW 8GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-3200C14-8GTZN 8GB
Samsung M393B1G70QH0-YK0 8GB
Kingston KTD3KX-HYA 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB
Kingston K1N7HK-ELC 2GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
A-DATA Technology DDR3 1600 4GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
Report a bug
×
Bug description
Source link