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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Samsung M392B1K70CM0-YH9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Samsung M392B1K70CM0-YH9 8GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Overall score
star star star star star
Samsung M392B1K70CM0-YH9 8GB

Samsung M392B1K70CM0-YH9 8GB

Differences Specifications Comments

Differences

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Report a bug
Samsung M392B1K70CM0-YH9 8GB Reasons to consider
Samsung M392B1K70CM0-YH9 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    40 left arrow 62
    Around -55% lower latency
  • Faster reading speed, GB/s
    11 left arrow 7.4
    Average value in the tests
  • Faster write speed, GB/s
    10.0 left arrow 5.9
    Average value in the tests

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Samsung M392B1K70CM0-YH9 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    62 left arrow 40
  • Read speed, GB/s
    7.4 left arrow 11.0
  • Write speed, GB/s
    5.9 left arrow 10.0
  • Memory bandwidth, mbps
    10600 left arrow 10600
Other
  • Description
    PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 left arrow PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    1612 left arrow 2493

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM comparisons

Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB

Samsung M392B1K70CM0-YH9 8GB RAM comparisons

Samsung M393B2G70BH0-CH9 16GB
Samsung M393B5170FH0-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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