RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology CT16G4SFD8266.C16FJ 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Crucial Technology CT16G4SFD8266.C16FJ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
38
Around 37% lower latency
Faster reading speed, GB/s
16
14.8
Average value in the tests
Reasons to consider
Crucial Technology CT16G4SFD8266.C16FJ 16GB
Report a bug
Faster write speed, GB/s
13.7
12.5
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
38
Read speed, GB/s
16.0
14.8
Write speed, GB/s
12.5
13.7
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
2843
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4SFD8266.C16FJ 16GB
A-DATA Technology AD73I1C1674EV 4GB
Kingmax Semiconductor GSAH22F-18---------- 16GB
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-3600C17-16GTZ 16GB
SK Hynix HMT325S6CFR8C-PB 2GB
G Skill Intl F4-3600C19-8GSXWB 8GB
A-DATA Technology DQVE1908 512MB
Kingmax Semiconductor GZNG43F-18---------- 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Maxsun MSD44G24Q3 4GB
Kingston ACR256X64D3S1333C9 2GB
Patriot Memory (PDP Systems) PSD416G21332 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB
A-DATA Technology AD73I1B1672EG 2GB
Apacer Technology 78.CAGPE.AUF0B 8GB
AMD R5S38G1601U2S 8GB
G Skill Intl F4-2133C15-8GIS 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK16GX4M2Z3466C16 8GB
Kingston 99U5458-008.A00LF 4GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
SK Hynix HMT325S6CFR8C-PB 2GB
G Skill Intl F4-4000C14-8GTZR 8GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology CT4G4DFS8213.M8FA 4GB
Report a bug
×
Bug description
Source link