RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT8G4DFS8266.M8FJ 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology CT8G4DFS8266.M8FJ 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Crucial Technology CT8G4DFS8266.M8FJ 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
29
Around 17% lower latency
Faster write speed, GB/s
12.5
12.1
Average value in the tests
Reasons to consider
Crucial Technology CT8G4DFS8266.M8FJ 8GB
Report a bug
Faster reading speed, GB/s
16.4
16
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT8G4DFS8266.M8FJ 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
29
Read speed, GB/s
16.0
16.4
Write speed, GB/s
12.5
12.1
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
3096
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology CT8G4DFS8266.M8FJ 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4DFS8266.M8FJ 8GB
Samsung M3 78T2863EHS-CF7 1GB
A-DATA Technology AM2P24HC4R1-BUPS 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology BLS4G4D26BFSB.8FBD2 4GB
Corsair CMD16GX3M2A1600C7 8GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Corsair CMX4GX3M2A1600C9 2GB
Corsair CM4X16GD3200C16K2E 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3600C18-8GTZN 8GB
Kingston KHX1600C9S3L/4G 4GB
G Skill Intl F4-4600C18-8GTRS 8GB
Crucial Technology CT25664AA800.M16FM 2GB
G Skill Intl F4-2133C15-16GFXR 16GB
G Skill Intl F3-14900CL9-4GBZL 4GB
Samsung M378A2G43MB1-CTD 16GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology CT8G4DFRA266.C8FB 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Kingston 99U5474-028.A00LF 4GB
G Skill Intl F4-4000C18-8GTRS 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT16G4DFD8213.C16FBR 16GB
Report a bug
×
Bug description
Source link