RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Gloway International Co. Ltd. TYP4U3000E16082C 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
53
Around 55% lower latency
Faster write speed, GB/s
12.5
9.6
Average value in the tests
Reasons to consider
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
Report a bug
Faster reading speed, GB/s
16.5
16
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
53
Read speed, GB/s
16.0
16.5
Write speed, GB/s
12.5
9.6
Memory bandwidth, mbps
19200
19200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2925
2301
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Gloway International Co. Ltd. TYP4U3000E16082C 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-4000C18-16GTRS 16GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-3866C18-8GTZR 8GB
Kingston HP669238-071-HYC 4GB
Corsair CMW32GX4M2C3200C16 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-2400C15-8GTZRX 8GB
Kingston 99P5471-004.A01LF 4GB
Patriot Memory (PDP Systems) PSD38G13332 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-3600C14-16GVK 16GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Kingston 9965643-006.A01G 8GB
Kingston 99U5474-010.A00LF 2GB
Nanya Technology M471A5143EB1-CRC 4GB
Kingston KHX1866C9D3/8GX 8GB
Kingston KF2666C15S4/8G 8GB
Samsung M378B5673FH0-CH9 2GB
Corsair CMG16GX4M2E3200C16 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB
G Skill Intl F4-2933C14-16GFX 16GB
Corsair CMY8GX3M2A2666C10 4GB
Corsair CM4B8G1J2400A16K2-ON 8GB
Report a bug
×
Bug description
Source link