RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
37
Around 35% lower latency
Faster reading speed, GB/s
16
15.4
Average value in the tests
Faster write speed, GB/s
12.5
12.4
Average value in the tests
Reasons to consider
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
37
Read speed, GB/s
16.0
15.4
Write speed, GB/s
12.5
12.4
Memory bandwidth, mbps
19200
19200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2925
2356
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
Samsung M393B1G70BH0-YK0 8GB
Patriot Memory (PDP Systems) PSD432G32002 32GB
Kingston 99U5403-465.A00LF 8GB
G Skill Intl F4-2400C15-8GNS 8GB
Samsung M393B1K70CH0-CH9 8GB
Transcend Information JM2666HLE-16G 16GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT8G4SFS824A.M8FD 8GB
Kingston 9905403-444.A00LF 4GB
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB
Samsung M471B1G73DB0-YK0 8GB
G Skill Intl F4-3200C14-16GTZSK 16GB
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 9905625-152.A00G 16GB
Samsung 1600 CL10 Series 8GB
Samsung M471A1A43CB1-CRC 8GB
Kingston KVR533D2N4 512MB
Corsair CM4B16G1L3200K18K2 16GB
Kingston MSI16D3LS1MNG/8G 8GB
Crucial Technology CT16G4DFD824A.C16FJ 16GB
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology CT4G4SFS824A.M8FB 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology BLS16G4D30AESE.M16FE 16GB
AMD R5S38G1601U2S 8GB
Corsair CM4B8G1J3000K16W4 8GB
Report a bug
×
Bug description
Source link