RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston LV32D4U2S8ME-16X 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Kingston LV32D4U2S8ME-16X 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Kingston LV32D4U2S8ME-16X 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
34
Around 29% lower latency
Faster write speed, GB/s
12.5
11.4
Average value in the tests
Reasons to consider
Kingston LV32D4U2S8ME-16X 16GB
Report a bug
Faster reading speed, GB/s
18
16
Average value in the tests
Higher memory bandwidth, mbps
25600
19200
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston LV32D4U2S8ME-16X 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
34
Read speed, GB/s
16.0
18.0
Write speed, GB/s
12.5
11.4
Memory bandwidth, mbps
19200
25600
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2925
3243
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Kingston LV32D4U2S8ME-16X 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston LV32D4U2S8ME-16X 16GB
Kingston HP26D4S9S1ME-4 4GB
Crucial Technology CT8G4DFS8213.C8FDR1 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLS16G4D26BFST.16FD 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
SK Hynix HMA84GL7AFR4N-UH 32GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Corsair CMK8GX4M1A2400C14 8GB
Corsair CMX4GX3M2A1600C9 2GB
Patriot Memory (PDP Systems) PSD432G32002S 32GB
Samsung M378B5773DH0-CH9 2GB
A-DATA Technology DDR4 4133 8GB
G Skill Intl F3-2133C9-4GAB 4GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
AMD R5316G1609U2K 8GB
EVGA 8GX-D4-3000-MR 8GB
Corsair CMV4GX3M1B1600C11 4GB
Crucial Technology CT8G4DFD824A.C16FBR2 8GB
Kingston KVT8FP-HYC 4GB
G Skill Intl F4-3200C14-8GTZSW 8GB
Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-4266C17-8GTZR 8GB
Kingston 9905403-500.A01LF 8GB
G Skill Intl F4-3600C16-8GTZKW 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Golden Empire CL15-17-17 D4-2666 8GB
Report a bug
×
Bug description
Source link