RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M3 93T2950EZ3-CCC 1GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Samsung M3 93T2950EZ3-CCC 1GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Samsung M3 93T2950EZ3-CCC 1GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
60
Around 60% lower latency
Faster write speed, GB/s
12.5
1,234.6
Average value in the tests
Higher memory bandwidth, mbps
19200
3200
Around 6% higher bandwidth
Reasons to consider
Samsung M3 93T2950EZ3-CCC 1GB
Report a bug
Faster reading speed, GB/s
3
16
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M3 93T2950EZ3-CCC 1GB
Main characteristics
Memory type
DDR4
DDR2
Latency in PassMark, ns
24
60
Read speed, GB/s
16.0
3,069.5
Write speed, GB/s
12.5
1,234.6
Memory bandwidth, mbps
19200
3200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
3-3-3-12 / 400 MHz
Ranking PassMark (The more the better)
2925
459
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB RAM comparisons
SK Hynix HMA82GS6DJR8N-WM 16GB
Corsair CMK16GX4M4A2133C13 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 2GB-DDR2 800Mhz 2GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
G Skill Intl F2-8500CL5-2GBPI 2GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
Kingston 99U5469-045.A00LF 4GB
Team Group Inc. TEAMGROUP-UD4-3733 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M3 93T2950EZ3-CCC 1GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology CT8G4DFS832A.M8FJ 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Kingston KHX2933C17S4/16G 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMT64GX4M4K3600C18 16GB
Kingston 2GB-DDR2 800Mhz 2GB
SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB
Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-2400C17-4GNT 4GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-4000C17-16GTRGB 16GB
Kingston 9965525-018.A00LF 4GB
Corsair CMU32GX4M2A2666C16 16GB
Crucial Technology CT25664AA800.M16FG 2GB
Corsair CMK64GX4M2D3600C18 32GB
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-3200C16-8GTZR 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Samsung M391A1G43EB1-CRC 8GB
Report a bug
×
Bug description
Source link