RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Crucial Technology CT8G4DFS824A.C8FE 8GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
Crucial Technology CT8G4DFS824A.C8FE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Faster reading speed, GB/s
15.6
15.1
Average value in the tests
Faster write speed, GB/s
11.8
9.7
Average value in the tests
Higher memory bandwidth, mbps
25600
19200
Around 1.33% higher bandwidth
Reasons to consider
Crucial Technology CT8G4DFS824A.C8FE 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
51
Around -76% lower latency
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
29
Read speed, GB/s
15.6
15.1
Write speed, GB/s
11.8
9.7
Memory bandwidth, mbps
25600
19200
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2687
2589
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT8G4DFS824A.C8FE 8GB RAM comparisons
G Skill Intl F4-3600C16-8GTZKK 8GB
G Skill Intl F4-3600C19-16GSXKB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-3000C15-8GRR 8GB
G Skill Intl F5-6400J3239G16G 16GB
Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB
Samsung M393B5270CH0-CH9 4GB
AMD R744G2133U1S 4GB
Kingston 9905403-174.A00LF 2GB
Crucial Technology CT4G4DFS8213.C8FAD1 4GB
TwinMOS 8DPT5MK8-TATP 2GB
Patriot Memory (PDP Systems) PSD48G266681 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology CT8G4DFS8266.M8FH 8GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3200C16-16GTZKO 16GB
SK Hynix HMT325S6CFR8C-H9 2GB
G Skill Intl F4-4000C16-8GTZRA 8GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-4800C19-8GTESC 8GB
Kingston 99U5584-005.A00LF 4GB
G Skill Intl F4-2666C18-4GRS 4GB
G Skill Intl F3-1866C8-8GTX 8GB
Kingston CBD24D4U7S8MA-8 8GB
Kingston 9905403-437.A01LF 4GB
Gloway International (HK) STK4U2400D15082C 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Samsung M393A1G43EB1-CRC 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2400C17-8GSXW 8GB
Report a bug
×
Bug description
Source link