RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs InnoDisk Corporation M4S0-4GSSNCIK 4GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
InnoDisk Corporation M4S0-4GSSNCIK 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Below the latency in the PassMark tests, ns
51
85
Around 40% lower latency
Faster reading speed, GB/s
15.6
11.3
Average value in the tests
Faster write speed, GB/s
11.8
6.0
Average value in the tests
Higher memory bandwidth, mbps
25600
21300
Around 1.2% higher bandwidth
Reasons to consider
InnoDisk Corporation M4S0-4GSSNCIK 4GB
Report a bug
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
85
Read speed, GB/s
15.6
11.3
Write speed, GB/s
11.8
6.0
Memory bandwidth, mbps
25600
21300
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2687
1118
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 8ATF2G64HZ-3G2E2 16GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Samsung M378A1G43EB1-CRC 8GB
A-DATA Technology DQKD1A08 1GB
SK Hynix HMA82GR8AMR4N-TF 16GB
Kingston KVR16N11/8-SP 8GB
Kingston KHX3466C17D4/16GX 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-4000C18-16GTRS 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingmax Semiconductor GLLH22F-18---------- 16GB
Samsung M3 78T2863QZS-CF7 1GB
Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston KH2400C15D4/8 8GB
Kingston KVR16N11/8-SP 8GB
Micron Technology 8ATF1G64AZ-3G2J1 8GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Super Talent F3200UA8G 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology CT4G4SFS824A.C8FBD2 4GB
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology BLS8G4D30AESEK.M8FE 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT8G4DFD8213.C16FAR1 8GB
Samsung M3 78T2863QZS-CF7 1GB
EVGA 16G-D4-2800-MR 4GB
Report a bug
×
Bug description
Source link