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Micron Technology 8ATF51264AZ-2G1B1 4GB
Inmos + 256MB
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Micron Technology 8ATF51264AZ-2G1B1 4GB vs Inmos + 256MB
Overall score
Micron Technology 8ATF51264AZ-2G1B1 4GB
Overall score
Inmos + 256MB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF51264AZ-2G1B1 4GB
Report a bug
Below the latency in the PassMark tests, ns
29
30
Around 3% lower latency
Faster reading speed, GB/s
15.8
11.5
Average value in the tests
Faster write speed, GB/s
11.8
9.1
Average value in the tests
Higher memory bandwidth, mbps
17000
16800
Around 1.01% higher bandwidth
Reasons to consider
Inmos + 256MB
Report a bug
Specifications
Complete list of technical specifications
Micron Technology 8ATF51264AZ-2G1B1 4GB
Inmos + 256MB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
29
30
Read speed, GB/s
15.8
11.5
Write speed, GB/s
11.8
9.1
Memory bandwidth, mbps
17000
16800
Other
Description
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
PC4-16800, TBD1 V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
no data
Ranking PassMark (The more the better)
2711
2318
Micron Technology 8ATF51264AZ-2G1B1 4GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
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