RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-3200C16-8GTZRN 8GB
Compare
Nanya Technology M2Y51264TU88B0B-3C 512MB vs G Skill Intl F4-3200C16-8GTZRN 8GB
Overall score
Nanya Technology M2Y51264TU88B0B-3C 512MB
Overall score
G Skill Intl F4-3200C16-8GTZRN 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2Y51264TU88B0B-3C 512MB
Report a bug
Faster reading speed, GB/s
3
19.4
Average value in the tests
Reasons to consider
G Skill Intl F4-3200C16-8GTZRN 8GB
Report a bug
Below the latency in the PassMark tests, ns
32
54
Around -69% lower latency
Faster write speed, GB/s
13.6
1,308.1
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-3200C16-8GTZRN 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
54
32
Read speed, GB/s
3,573.5
19.4
Write speed, GB/s
1,308.1
13.6
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
371
3364
Nanya Technology M2Y51264TU88B0B-3C 512MB RAM comparisons
Nanya Technology M2Y51264TU88B0B-37 512MB
Kingston KF3200C20S4/8G 8GB
G Skill Intl F4-3200C16-8GTZRN 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK64GX5M2B5200C40 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-12800CL7-4GBXM 4GB
Samsung M471A1G43DB0-CPB 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT8G4DFS6266.M4FE 8GB
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-4000C19-8GTZ 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Samsung M474A2K43BB1-CRC 16GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Corsair CMD16GX4M2B3466C16 8GB
Samsung M3 78T6553CZ3-CD5 512MB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
SK Hynix HMT451S6DFR8A-PB 4GB
Micron Technology 8ATF1G64AZ-2G3H1 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CM4X4GF3000C15K4 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-3000C16-8GSXFB 8GB
Kingston 9905403-444.A00LF 4GB
Kingston KHX2400C1C14/16G 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Samsung M474A2K43BB1-CRC 16GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Micron Technology TEAMGROUP-UD4-3000 16GB
Corsair CMD8GX3M2A2933C12 4GB
Crucial Technology CT8G4DFS8213.C8FDR1 8GB
Report a bug
×
Bug description
Source link