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Nanya Technology NT4GC64B8HG0NS-DI 4GB
Ramaxel Technology RMT3010EC58E8F1333 2GB

Nanya Technology NT4GC64B8HG0NS-DI 4GB vs Ramaxel Technology RMT3010EC58E8F1333 2GB

Overall score
star star star star star
Nanya Technology NT4GC64B8HG0NS-DI 4GB

Nanya Technology NT4GC64B8HG0NS-DI 4GB

Overall score
star star star star star
Ramaxel Technology RMT3010EC58E8F1333 2GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

Differences Specifications Comments

Differences

Nanya Technology NT4GC64B8HG0NS-DI 4GB Reasons to consider
Nanya Technology NT4GC64B8HG0NS-DI 4GB
Report a bug
  • Faster write speed, GB/s
    9.0 left arrow 7.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    12800 left arrow 10600
    Around 1.21% higher bandwidth
Ramaxel Technology RMT3010EC58E8F1333 2GB Reasons to consider
Ramaxel Technology RMT3010EC58E8F1333 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    26 left arrow 45
    Around -73% lower latency
  • Faster reading speed, GB/s
    13.5 left arrow 13
    Average value in the tests

Specifications

Complete list of technical specifications
Nanya Technology NT4GC64B8HG0NS-DI 4GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    45 left arrow 26
  • Read speed, GB/s
    13.0 left arrow 13.5
  • Write speed, GB/s
    9.0 left arrow 7.8
  • Memory bandwidth, mbps
    12800 left arrow 10600
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    2079 left arrow 1932

Nanya Technology NT4GC64B8HG0NS-DI 4GB RAM comparisons

SK Hynix HMA42GR7AFR4N-TF 16GB
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Ramaxel Technology RMT3010EC58E8F1333 2GB RAM comparisons

Nanya Technology M2S2G64CB88G5N-DI 2GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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