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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M378A2G43AB3-CWE 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Samsung M378A2G43AB3-CWE 16GB

Overall score
star star star star star
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Overall score
star star star star star
Samsung M378A2G43AB3-CWE 16GB

Samsung M378A2G43AB3-CWE 16GB

Differences Specifications Comments

Differences

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB Reasons to consider
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Report a bug
Samsung M378A2G43AB3-CWE 16GB Reasons to consider
Samsung M378A2G43AB3-CWE 16GB
Report a bug
  • Faster reading speed, GB/s
    17.6 left arrow 13.7
    Average value in the tests
  • Faster write speed, GB/s
    12.1 left arrow 9.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 12800
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M378A2G43AB3-CWE 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    35 left arrow 35
  • Read speed, GB/s
    13.7 left arrow 17.6
  • Write speed, GB/s
    9.6 left arrow 12.1
  • Memory bandwidth, mbps
    12800 left arrow 25600
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2312 left arrow 3221

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM comparisons

SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB

Samsung M378A2G43AB3-CWE 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
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