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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung V-GeN D4S4GL32A8TL 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Samsung V-GeN D4S4GL32A8TL 4GB

Overall score
star star star star star
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Overall score
star star star star star
Samsung V-GeN D4S4GL32A8TL 4GB

Samsung V-GeN D4S4GL32A8TL 4GB

Differences Specifications Comments

Differences

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB Reasons to consider
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    35 left arrow 58
    Around 40% lower latency
  • Faster write speed, GB/s
    9.6 left arrow 9.5
    Average value in the tests
Samsung V-GeN D4S4GL32A8TL 4GB Reasons to consider
Samsung V-GeN D4S4GL32A8TL 4GB
Report a bug
  • Faster reading speed, GB/s
    18.5 left arrow 13.7
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung V-GeN D4S4GL32A8TL 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    35 left arrow 58
  • Read speed, GB/s
    13.7 left arrow 18.5
  • Write speed, GB/s
    9.6 left arrow 9.5
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2312 left arrow 1998

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM comparisons

SK Hynix HMT351R7EFR8C-RD 4GB
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Samsung V-GeN D4S4GL32A8TL 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
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