RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
PNY Electronics PNY 2GB
Samsung M471A1G43EB1-CRC 8GB
Compare
PNY Electronics PNY 2GB vs Samsung M471A1G43EB1-CRC 8GB
Overall score
PNY Electronics PNY 2GB
Overall score
Samsung M471A1G43EB1-CRC 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics PNY 2GB
Report a bug
Reasons to consider
Samsung M471A1G43EB1-CRC 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
27
Around -8% lower latency
Faster reading speed, GB/s
14.8
13.8
Average value in the tests
Faster write speed, GB/s
9.3
8.4
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
PNY Electronics PNY 2GB
Samsung M471A1G43EB1-CRC 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
25
Read speed, GB/s
13.8
14.8
Write speed, GB/s
8.4
9.3
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2274
2340
PNY Electronics PNY 2GB RAM comparisons
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Samsung M471A1G43EB1-CRC 8GB RAM comparisons
Samsung M393B2G70BH0-CK0 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
AMD AE34G1601U1 4GB
Corsair CMD16GX4M2B3200C14 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-2400C17-8GDBVR 8GB
Corsair CMY16GX3M4A2133C8 4GB
Panram International Corporation W4N2666PS-16G 16GB
Corsair CMD16GX3M2A1866C9 8GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
A-DATA Technology DDR3 1333G 2GB
Ramaxel Technology RMUA5120ME86H9F-2666 4GB
A-DATA Technology DDR2 800G 2GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
Micron Technology 8KTF51264HZ-1G6D1 4GB
Samsung M471A1K1KBB0-CPB 8GB
AMD R5316G1609U2K 8GB
Ramaxel Technology RMUA5110KE68H9F-2400 4GB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-4000C18-32GVK 32GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Corsair CM4X8GF2666C18S2 8GB
SK Hynix HMT425S6CFR6A-PB 2GB
G Skill Intl F4-3200C15-8GVR 8GB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3000C16-8GSXWB 8GB
Corsair CMSO4GX3M1C1600C11 4GB
Crucial Technology BL16G32C16S4B.8FB 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Chun Well Technology Holding Limited D4U0832161B 8GB
Report a bug
×
Bug description
Source link