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PNY Electronics PNY 2GB
Samsung M471A5143DB0-CPB 4GB
Compare
PNY Electronics PNY 2GB vs Samsung M471A5143DB0-CPB 4GB
Overall score
PNY Electronics PNY 2GB
Overall score
Samsung M471A5143DB0-CPB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics PNY 2GB
Report a bug
Below the latency in the PassMark tests, ns
27
39
Around 31% lower latency
Reasons to consider
Samsung M471A5143DB0-CPB 4GB
Report a bug
Faster reading speed, GB/s
14.1
13.8
Average value in the tests
Faster write speed, GB/s
10.7
8.4
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
PNY Electronics PNY 2GB
Samsung M471A5143DB0-CPB 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
39
Read speed, GB/s
13.8
14.1
Write speed, GB/s
8.4
10.7
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2274
2183
PNY Electronics PNY 2GB RAM comparisons
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Samsung M471A5143DB0-CPB 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
0 ns
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