RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Ramos Technology EWB8GB681CA3-16IC 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Compare
Ramos Technology EWB8GB681CA3-16IC 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Overall score
Ramos Technology EWB8GB681CA3-16IC 8GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Ramos Technology EWB8GB681CA3-16IC 8GB
Report a bug
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Report a bug
Below the latency in the PassMark tests, ns
18
25
Around -39% lower latency
Faster reading speed, GB/s
20.4
15.3
Average value in the tests
Faster write speed, GB/s
18.1
9.8
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Ramos Technology EWB8GB681CA3-16IC 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
18
Read speed, GB/s
15.3
20.4
Write speed, GB/s
9.8
18.1
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2646
3529
Ramos Technology EWB8GB681CA3-16IC 8GB RAM comparisons
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EEB8GB681CAE-16IC 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-3000C15-16GTZ 16GB
Kingston KHX1600C9S3L/4G 4GB
G Skill Intl F4-3600C17-4GTZ 4GB
SpecTek Incorporated ?????????????????? 2GB
Corsair CMD16GX4M2B3200C14 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Samsung M471A1K1KBB1-CRC 8GB
Kingmax Semiconductor KLDE88F-B8MO5 2GB
Crucial Technology BL8G30C15U4BL.M8FE1 8GB
Kingston ACR256X64D3S1333C9 2GB
Samsung M471A1K1KBB0-CPB 8GB
Kingston KVR16N11/8-SP 8GB
Neo Forza GKE160SO204808-3200 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3000C16-8GSXWB 8GB
Kingston 99U5403-036.A00G 4GB
Crucial Technology BLE4G4D26AFEA.8FAD 4GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology BL8G32C16U4RL.M8FE1 8GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-2400C15-4GNT 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Crucial Technology CT8G4DFD8213.M16FA 8GB
PUSKILL DDR3 1600 8G 8GB
Panram International Corporation R748G2133U2S 8GB
AMD AE34G1601U1 4GB
Apacer Technology 78.CAGMT.40C0B 8GB
Report a bug
×
Bug description
Source link