RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Ramos Technology RMB4GB58BCA3-13HC 4GB
G Skill Intl F4-3000C16-16GISB 16GB
Compare
Ramos Technology RMB4GB58BCA3-13HC 4GB vs G Skill Intl F4-3000C16-16GISB 16GB
Overall score
Ramos Technology RMB4GB58BCA3-13HC 4GB
Overall score
G Skill Intl F4-3000C16-16GISB 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Ramos Technology RMB4GB58BCA3-13HC 4GB
Report a bug
Below the latency in the PassMark tests, ns
23
29
Around 21% lower latency
Reasons to consider
G Skill Intl F4-3000C16-16GISB 16GB
Report a bug
Faster reading speed, GB/s
17.2
11.6
Average value in the tests
Faster write speed, GB/s
13.0
5.6
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Ramos Technology RMB4GB58BCA3-13HC 4GB
G Skill Intl F4-3000C16-16GISB 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
23
29
Read speed, GB/s
11.6
17.2
Write speed, GB/s
5.6
13.0
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1751
3416
Ramos Technology RMB4GB58BCA3-13HC 4GB RAM comparisons
Ramos Technology RMB4GB584CA3-13HC 4GB
takeMS International AG TMS4GB364E081139EM 4GB
G Skill Intl F4-3000C16-16GISB 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DQKD1A08 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Wilk Elektronik S.A. GR1600D364L11/4G 4GB
Wilk Elektronik S.A. GR1600D364L11S/4G 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
Kingston 9965662-016.A00G 16GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology CT8G4SFRA32A.C8FE 8GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-4400C19-32GTZR 32GB
Kingston 9965525-155.A00LF 8GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3000C15-4GRR 4GB
TwinMOS 8DHE3MN8-HATP 2GB
Golden Empire CL18-20-20 D4-3000 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
A-DATA Technology DDR4 3200 8GB
Samsung M4 70T5663EH3-CF7 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-2666C18-8GRS 8GB
Crucial Technology 8G4US2400.M8B1 8GB
Corsair CMK64GX5M2B5200C40 32GB
Crucial Technology CT32G4SFD832A.M16FB 32GB
Kingston 2GB-DDR2 800Mhz 2GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK8GX4M1D2666C16 8GB
Report a bug
×
Bug description
Source link