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Samsung 1600 CL10 Series 8GB
Corsair CMD16GX4M4A2800C16 4GB

Samsung 1600 CL10 Series 8GB vs Corsair CMD16GX4M4A2800C16 4GB

Overall score
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Overall score
star star star star star
Corsair CMD16GX4M4A2800C16 4GB

Corsair CMD16GX4M4A2800C16 4GB

Differences Specifications Comments

Differences

Samsung 1600 CL10 Series 8GB Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 38
    Around 34% lower latency
  • Faster reading speed, GB/s
    16.1 left arrow 14.2
    Average value in the tests
Corsair CMD16GX4M4A2800C16 4GB Reasons to consider
Corsair CMD16GX4M4A2800C16 4GB
Report a bug
  • Faster write speed, GB/s
    10.6 left arrow 10.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Corsair CMD16GX4M4A2800C16 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 38
  • Read speed, GB/s
    16.1 left arrow 14.2
  • Write speed, GB/s
    10.1 left arrow 10.6
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2764 left arrow 2807

Samsung 1600 CL10 Series 8GB RAM comparisons

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Corsair CMD16GX4M4A2800C16 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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