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Samsung DDR3 8GB 1600MHz 8GB
Chun Well Technology Holding Limited D4U1636144B 16GB

Samsung DDR3 8GB 1600MHz 8GB vs Chun Well Technology Holding Limited D4U1636144B 16GB

Overall score
star star star star star
Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Overall score
star star star star star
Chun Well Technology Holding Limited D4U1636144B 16GB

Chun Well Technology Holding Limited D4U1636144B 16GB

Differences Specifications Comments

Differences

Samsung DDR3 8GB 1600MHz 8GB Reasons to consider
Samsung DDR3 8GB 1600MHz 8GB
Report a bug
Chun Well Technology Holding Limited D4U1636144B 16GB Reasons to consider
Chun Well Technology Holding Limited D4U1636144B 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    26 left arrow 43
    Around -65% lower latency
  • Faster reading speed, GB/s
    23.7 left arrow 14.9
    Average value in the tests
  • Faster write speed, GB/s
    18.3 left arrow 9.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Samsung DDR3 8GB 1600MHz 8GB
Chun Well Technology Holding Limited D4U1636144B 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    43 left arrow 26
  • Read speed, GB/s
    14.9 left arrow 23.7
  • Write speed, GB/s
    9.6 left arrow 18.3
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2506 left arrow 4124

Samsung DDR3 8GB 1600MHz 8GB RAM comparisons

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Chun Well Technology Holding Limited D4U1636144B 16GB RAM comparisons

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
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