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Samsung M3 78T2863EHS-CF7 1GB
Gloway International (HK) STK4U2133D15081C 8GB

Samsung M3 78T2863EHS-CF7 1GB vs Gloway International (HK) STK4U2133D15081C 8GB

Overall score
star star star star star
Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Overall score
star star star star star
Gloway International (HK) STK4U2133D15081C 8GB

Gloway International (HK) STK4U2133D15081C 8GB

Differences Specifications Comments

Differences

Samsung M3 78T2863EHS-CF7 1GB Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 16.8
    Average value in the tests
  • Faster write speed, GB/s
    2,123.3 left arrow 12.3
    Average value in the tests
Gloway International (HK) STK4U2133D15081C 8GB Reasons to consider
Gloway International (HK) STK4U2133D15081C 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    22 left arrow 59
    Around -168% lower latency
  • Higher memory bandwidth, mbps
    17000 left arrow 6400
    Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Gloway International (HK) STK4U2133D15081C 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    59 left arrow 22
  • Read speed, GB/s
    4,833.8 left arrow 16.8
  • Write speed, GB/s
    2,123.3 left arrow 12.3
  • Memory bandwidth, mbps
    6400 left arrow 17000
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    731 left arrow 3036

Samsung M3 78T2863EHS-CF7 1GB RAM comparisons

Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB

Gloway International (HK) STK4U2133D15081C 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons

Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Gloway International (HK) STK4U2133D15081C 8GB
Gloway International (HK) STK4U2133D15081C 8GB
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Crucial Technology CT8G4SFD824A.C16FE 8GB
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Apacer Technology 78.CAGPP.ARC0B 8GB
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Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
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Crucial Technology CT8G4SFS8266.C8FJ 8GB
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Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
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Crucial Technology BLS8G4D30AESEK.M8FE1 8GB
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A-DATA Technology ADOVE1A0834E 1GB
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Elpida EBJ17RG4EFWA-DJ-F 16GB
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Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
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SK Hynix HMT425S6CFR6A-PB 2GB
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Golden Empire 1GB DDR2 800 CAS=4 1GB
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Patriot Memory (PDP Systems) 2800 C18 Series 16GB
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G Skill Intl F2-8500CL5-2GBPI 2GB
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Corsair CMD64GX4M4B3466C16 16GB
Memory RAM
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Kingston KHX3200C16D4/16GX 16GB
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A-DATA Technology AD5U480016G-B 16GB
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Kingston KVT8FP-HYC 4GB
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SK Hynix HMA82GS6DJR8N-XN 16GB
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Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology CT4G4SFS824A.C8FBD2 4GB
Crucial Technology CT4G4SFS824A.C8FBD2 4GB
Memory RAM
Crucial Technology CT16G4DFD8213.C16FBD 16GB
Crucial Technology CT16G4DFD8213.C16FBD 16GB
G Skill Intl F4-3200C16-8GIS 8GB
G Skill Intl F4-3200C16-8GIS 8GB
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