RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
Kingmax Semiconductor GLLH22F-18---------- 16GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs Kingmax Semiconductor GLLH22F-18---------- 16GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
Kingmax Semiconductor GLLH22F-18---------- 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
14.5
Average value in the tests
Reasons to consider
Kingmax Semiconductor GLLH22F-18---------- 16GB
Report a bug
Below the latency in the PassMark tests, ns
32
59
Around -84% lower latency
Faster write speed, GB/s
8.0
2,123.3
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Kingmax Semiconductor GLLH22F-18---------- 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
32
Read speed, GB/s
4,833.8
14.5
Write speed, GB/s
2,123.3
8.0
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
731
2307
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Kingmax Semiconductor GLLH22F-18---------- 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T2863EHS-CF7 1GB
Kingmax Semiconductor GLLH22F-18---------- 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Micron Technology 8ATF1G64HZ-2G3B2 8GB
Samsung M393B5170FH0-CK0 4GB
Hewlett-Packard 48U45AA# 16GB
Kingston 99U5471-020.A00LF 4GB
Kingston 9905702-017.A00G 8GB
Samsung M471B5273EB0-CK0 4GB
Corsair CMK32GX4M1A2400C16 32GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
G Skill Intl F4-4266C17-16GVKB 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Hewlett-Packard 7EH64AA#ABC 8GB
Samsung M471B5173QH0-YK0 4GB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 8ATF2G64AZ-3G2B1 16GB
Kingston 99U5403-036.A00G 4GB
Corsair CMR32GX4M4D3000C16 8GB
AMD AE34G1601U1 4GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology BL16G36C16U4W.M16FE1 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMK8GX4M1D2400C14 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-5066C20-8GVK 8GB
Report a bug
×
Bug description
Source link