RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863QZS-CF7 1GB
Netac Technology Co Ltd EKBLACK4083016A 8GB
Compare
Samsung M3 78T2863QZS-CF7 1GB vs Netac Technology Co Ltd EKBLACK4083016A 8GB
Overall score
Samsung M3 78T2863QZS-CF7 1GB
Overall score
Netac Technology Co Ltd EKBLACK4083016A 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863QZS-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
19.7
Average value in the tests
Reasons to consider
Netac Technology Co Ltd EKBLACK4083016A 8GB
Report a bug
Below the latency in the PassMark tests, ns
20
69
Around -245% lower latency
Faster write speed, GB/s
15.5
1,857.7
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863QZS-CF7 1GB
Netac Technology Co Ltd EKBLACK4083016A 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
69
20
Read speed, GB/s
4,217.2
19.7
Write speed, GB/s
1,857.7
15.5
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
668
3404
Samsung M3 78T2863QZS-CF7 1GB RAM comparisons
Samsung M3 78T2953EZ3-CE7 1GB
Kingston 99U5712-002.A00G 16GB
Netac Technology Co Ltd EKBLACK4083016A 8GB RAM comparisons
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T2863QZS-CF7 1GB
Netac Technology Co Ltd EKBLACK4083016A 8GB
Kingston 99U5458-008.A00LF 4GB
Corsair CMW32GX4M4Z3200C16 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Transcend Information TS512MLH64V4H 4GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB
G Skill Intl F3-2666C12-8GTXD 8GB
AMD R948G2806U2S 8GB
Crucial Technology CT25664AA800.M16FM 2GB
Apacer Technology 78.C1GMM.DFW0C 8GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-4000C14-8GTZR 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Asgard VMA41UF-MEC1U2BQ2 4GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Samsung V-GeN D4S8GL32A8TL 8GB
SK Hynix HYMP112U64CP8-S5 1GB
G Skill Intl F4-4000C18-8GTRS 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Lexar Co Limited LD4AS008G-H2666GST 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Avant Technology J641GU42J7240ND 8GB
Nanya Technology M2Y51264TU88A2B-3C 512MB
Essencore Limited KD4AGS88C-32N220D 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Nanya Technology NT8GA64D88CX3S-JR 8GB
Report a bug
×
Bug description
Source link