RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMV16GX4M1A2666C18 16GB
Compare
Samsung M3 78T3354BZ0-CCC 256MB vs Corsair CMV16GX4M1A2666C18 16GB
Overall score
Samsung M3 78T3354BZ0-CCC 256MB
Overall score
Corsair CMV16GX4M1A2666C18 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
Faster reading speed, GB/s
2
14
Average value in the tests
Reasons to consider
Corsair CMV16GX4M1A2666C18 16GB
Report a bug
Below the latency in the PassMark tests, ns
32
46
Around -44% lower latency
Faster write speed, GB/s
11.3
1,519.2
Average value in the tests
Higher memory bandwidth, mbps
21300
3200
Around 6.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMV16GX4M1A2666C18 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
32
Read speed, GB/s
2,909.8
14.0
Write speed, GB/s
1,519.2
11.3
Memory bandwidth, mbps
3200
21300
Other
Description
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
3-3-3-12 / 400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
241
2660
Samsung M3 78T3354BZ0-CCC 256MB RAM comparisons
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Corsair CMV16GX4M1A2666C18 16GB RAM comparisons
Kingston 9905403-156.A00LF 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-2666C12-8GTXD 8GB
Avant Technology W642GU42J7240N8 16GB
Samsung M393B5170FH0-CK0 4GB
Panram International Corporation W4N2666PS-8G 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2400C16-8GFX 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMK16GX4M1A2400C16 16GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Maxsun MSD44G24Q3 4GB
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F4-3200C16-8GSX 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology CT25664AC667.C16FH 2GB
Crucial Technology CT51264BD1339.M16F 4GB
Micron Technology 9905625-004.A03LF 8GB
Kingston 99U5584-004.A00LF 4GB
Corsair CM4X16GE2666C16K8 16GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Patriot Memory (PDP Systems) PSD48G26662 8GB
Kingston 9965525-018.A00LF 4GB
A-DATA Technology AO1P32NC8T1-BCSS 8GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT16G4SFS832A.M8FE 16GB
Samsung M393B1K70CH0-CH9 8GB
Apacer Technology 78.CAGMR.ARC0B 8GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6
G Skill Intl F4-2666C15-8GRR 8GB
Report a bug
×
Bug description
Source link