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Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology CT16G4DFS8266.C8FE 16GB

Samsung M3 78T5663RZ3-CE6 2GB vs Crucial Technology CT16G4DFS8266.C8FE 16GB

Overall score
star star star star star
Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Overall score
star star star star star
Crucial Technology CT16G4DFS8266.C8FE 16GB

Crucial Technology CT16G4DFS8266.C8FE 16GB

Differences Specifications Comments

Differences

Samsung M3 78T5663RZ3-CE6 2GB Reasons to consider
Samsung M3 78T5663RZ3-CE6 2GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 14.2
    Average value in the tests
  • Faster write speed, GB/s
    2,168.2 left arrow 10.3
    Average value in the tests
Crucial Technology CT16G4DFS8266.C8FE 16GB Reasons to consider
Crucial Technology CT16G4DFS8266.C8FE 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    29 left arrow 60
    Around -107% lower latency
  • Higher memory bandwidth, mbps
    21300 left arrow 5300
    Around 4.02 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    60 left arrow 29
  • Read speed, GB/s
    4,595.2 left arrow 14.2
  • Write speed, GB/s
    2,168.2 left arrow 10.3
  • Memory bandwidth, mbps
    5300 left arrow 21300
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    941 left arrow 2984

Samsung M3 78T5663RZ3-CE6 2GB RAM comparisons

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

Crucial Technology CT16G4DFS8266.C8FE 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons

Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
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PUSKILL DDR3 1600 8G 8GB
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A-DATA Technology DQVE1908 512MB
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G Skill Intl F4-3466C16-8GTZR 8GB
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Nanya Technology NT4GC64B8HG0NS-CG 4GB
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G Skill Intl F4-2933C16-16GTZRX 16GB
Memory RAM
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Patriot Memory (PDP Systems) 3200 C18 Series 8GB
Memory RAM