RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMSX64GX4M2A2666C18 32GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Corsair CMSX64GX4M2A2666C18 32GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Corsair CMSX64GX4M2A2666C18 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
15.2
Average value in the tests
Faster write speed, GB/s
2,622.0
13.4
Average value in the tests
Reasons to consider
Corsair CMSX64GX4M2A2666C18 32GB
Report a bug
Below the latency in the PassMark tests, ns
37
77
Around -108% lower latency
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMSX64GX4M2A2666C18 32GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
37
Read speed, GB/s
3,405.2
15.2
Write speed, GB/s
2,622.0
13.4
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
763
3147
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Corsair CMSX64GX4M2A2666C18 32GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 16JTF51264HZ-1G6M1 4GB
Corsair CMSX16GX4M2A3200C22 8GB
SK Hynix HYMP112U64CP8-S6 1GB
G Skill Intl F4-3200C16-8GTZKO 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Samsung M378A1K43CB2-CRC 8GB
Samsung M393B5170FH0-CK0 4GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
Kingston 99U5471-056.A00LF 8GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Kingston 9905403-090.A01LF 4GB
SK Hynix HMA451U7AFR8N-TF 4GB
Avant Technology F6451U64F9333G 4GB
Micron Technology AFLD416EH1P 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Asgard VML41UG-MIC1U22T1 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N
Samsung M393A1G40DB0-CPB 8GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMW32GX4M4K4266C19 8GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Avexir Technologies Corporation T-20181206 8GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Corsair CMW32GX4M4Z4000C18 8GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Crucial Technology CT4G4SFS824A.C8FE 4GB
Report a bug
×
Bug description
Source link