Samsung M3 93T5750CZA-CE6 2GB vs Mushkin 99[2/7/4]191F 4GB

Overall score

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Overall score

Mushkin 99[2/7/4]191F 4GB

Mushkin 99[2/7/4]191F 4GB

Differences Specifications Comments

Differences

Samsung M3 93T5750CZA-CE6 2GB

Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB

Faster reading speed, GB/s

3 13.9

Average value in the tests
Faster write speed, GB/s

2,622.0 10.9

Average value in the tests

Mushkin 99[2/7/4]191F 4GB

Reasons to consider
Mushkin 99[2/7/4]191F 4GB

Below the latency in the PassMark tests, ns

27 77

Around -185% lower latency
Higher memory bandwidth, mbps

17000 5300

Around 3.21 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M3 93T5750CZA-CE6 2GB

Mushkin 99[2/7/4]191F 4GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

77 27
Read speed, GB/s

3,405.2 13.9
Write speed, GB/s

2,622.0 10.9
Memory bandwidth, mbps

5300 17000

Other

Description

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

763 2755

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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