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Samsung M3 93T5750CZA-CE6 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Samsung M3 93T5750CZA-CE6 2GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Overall score
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Overall score
star star star star star
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Differences Specifications Comments

Differences

Samsung M3 93T5750CZA-CE6 2GB Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 15.3
    Average value in the tests
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB Reasons to consider
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    72 left arrow 77
    Around -7% lower latency
  • Faster write speed, GB/s
    8.0 left arrow 2,622.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 5300
    Around 3.62 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    77 left arrow 72
  • Read speed, GB/s
    3,405.2 left arrow 15.3
  • Write speed, GB/s
    2,622.0 left arrow 8.0
  • Memory bandwidth, mbps
    5300 left arrow 19200
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 15 16 17 18 19 20
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    763 left arrow 1817

Samsung M3 93T5750CZA-CE6 2GB RAM comparisons

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Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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