RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-3200C14-8GTZ 8GB
Compare
Samsung M378A1K43EB2-CWE 8GB vs G Skill Intl F4-3200C14-8GTZ 8GB
Overall score
Samsung M378A1K43EB2-CWE 8GB
Overall score
G Skill Intl F4-3200C14-8GTZ 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378A1K43EB2-CWE 8GB
Report a bug
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
G Skill Intl F4-3200C14-8GTZ 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
33
Around -14% lower latency
Faster reading speed, GB/s
17.9
17.6
Average value in the tests
Faster write speed, GB/s
15.3
12.0
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-3200C14-8GTZ 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
33
29
Read speed, GB/s
17.6
17.9
Write speed, GB/s
12.0
15.3
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2910
3567
Samsung M378A1K43EB2-CWE 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB
G Skill Intl F4-3200C14-8GTZ 8GB RAM comparisons
Kingston 9905403-156.A00LF 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SpecTek Incorporated ?????????????????? 2GB
Samsung M393A2G40EB1-CPB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-2400C15Z8GNT 8GB
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-3200C14-8GTZ 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Crucial Technology BLS4G4D26BFSB.8FBD2 4GB
Apacer Technology 78.B1GET.AU00C 4GB
Corsair CMSX32GX4M2A2666C18 16GB
SK Hynix HMT351S6EFR8A-PB 4GB
Nanya Technology NT4GC64B8HG0NS-DI 4GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3600C14-16GTRG 16GB
Samsung M378B5173BH0-CH9 4GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMD32GX4M2C3200C16 16GB
SK Hynix DDR2 800 2G 2GB
Crucial Technology CT8G4DFS824A.C8FAD1 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-4000C17-8GTZR 8GB
SK Hynix HMT425S6CFR6A-PB 2GB
Chun Well Technology Holding Limited CL22-22-22 D4-3200
Report a bug
×
Bug description
Source link