RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378A1K43EB2-CWE 8GB
Smart Modular SMS4TDC3C0K0446SCG 4GB
Compare
Samsung M378A1K43EB2-CWE 8GB vs Smart Modular SMS4TDC3C0K0446SCG 4GB
Overall score
Samsung M378A1K43EB2-CWE 8GB
Overall score
Smart Modular SMS4TDC3C0K0446SCG 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378A1K43EB2-CWE 8GB
Report a bug
Below the latency in the PassMark tests, ns
33
39
Around 15% lower latency
Faster reading speed, GB/s
17.6
14.3
Average value in the tests
Faster write speed, GB/s
12.0
10.8
Average value in the tests
Higher memory bandwidth, mbps
25600
21300
Around 1.2% higher bandwidth
Reasons to consider
Smart Modular SMS4TDC3C0K0446SCG 4GB
Report a bug
Specifications
Complete list of technical specifications
Samsung M378A1K43EB2-CWE 8GB
Smart Modular SMS4TDC3C0K0446SCG 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
33
39
Read speed, GB/s
17.6
14.3
Write speed, GB/s
12.0
10.8
Memory bandwidth, mbps
25600
21300
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2910
2159
Samsung M378A1K43EB2-CWE 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB
Smart Modular SMS4TDC3C0K0446SCG 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378A1K43EB2-CWE 8GB
Smart Modular SMS4TDC3C0K0446SCG 4GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Samsung M378A1G43TB1-CTD 8GB
Crucial Technology CT25664AA800.M16FM 2GB
Team Group Inc. TEAMGROUP-D4-3733 8GB
Kingston 9965433-034.A00LF 4GB
Samsung M393A5143DB0-CRC 4GB
Corsair CMY8GX3M2A2666C10 4GB
Micron Technology 8ATF1G64HZ-2G2G1 8GB
Samsung M378B5673EH1-CF8 2GB
Kingston KF3200C20S4/16GX 16GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology CT16G4DFD8266.M16FH 16GB
TwinMOS 9DNPBNZB-TATP 4GB
G Skill Intl F4-4133C19-8GTZRF 8GB
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-2400C15-4GVR 4GB
SK Hynix HYMP512U64CP8-Y5 1GB
Patriot Memory (PDP Systems) PSD48G213381S 8GB
Kingston 9965525-155.A00LF 8GB
Micron Technology 8ATF1G64AZ-2G6J1 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMW8GX4M1Z3600C18 8GB
Kingston KHX318C10FR/8G 8GB
Chun Well Technology Holding Limited D4U0832161B 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston HX424C15PB/4 4GB
Report a bug
×
Bug description
Source link