RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378A2K43EB1-CWE 16GB
G Skill Intl F4-3200C14-16GTZ 16GB
Compare
Samsung M378A2K43EB1-CWE 16GB vs G Skill Intl F4-3200C14-16GTZ 16GB
Overall score
Samsung M378A2K43EB1-CWE 16GB
Overall score
G Skill Intl F4-3200C14-16GTZ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378A2K43EB1-CWE 16GB
Report a bug
Faster reading speed, GB/s
18.5
17.7
Average value in the tests
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
G Skill Intl F4-3200C14-16GTZ 16GB
Report a bug
Below the latency in the PassMark tests, ns
30
33
Around -10% lower latency
Faster write speed, GB/s
15.0
13.8
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M378A2K43EB1-CWE 16GB
G Skill Intl F4-3200C14-16GTZ 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
33
30
Read speed, GB/s
18.5
17.7
Write speed, GB/s
13.8
15.0
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
3341
3593
Samsung M378A2K43EB1-CWE 16GB RAM comparisons
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C14-16GTZ 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 91T2953GZ3-CF7 1GB
Crucial Technology CT16G4DFD8213.C16FBD 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMD16GX4M4B3000C15 4GB
Samsung M471B1G73DB0-YK0 8GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
Kingston 9905471-076.A00LF 8GB
Crucial Technology BLS16G4D32AESC.M16FE 16GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT8G4DFD824A.C16FBR2 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Essencore Limited KD4AGU88C-26N1900 16GB
Samsung M471B1G73DB0-YK0 8GB
King Tiger Technology Tigo-X3-3200MHz-8G 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston CAC24D4S7D8MB-16 16GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BLS8G4D26BFSE.16FB 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston 9905702-006.A00G 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology BLT8G4D26BFT4K.C8FD 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-3200C14-8GVR 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT16G4DFRA32A.M16FR 16GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology CT16G4S24AM.M16FE 16GB
Report a bug
×
Bug description
Source link