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Samsung M378B5673EH1-CF8 2GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB

Samsung M378B5673EH1-CF8 2GB vs A-DATA Technology AO1E34RCSV1-BF1S 16GB

Overall score
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Overall score
star star star star star
A-DATA Technology AO1E34RCSV1-BF1S 16GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB

Differences Specifications Comments

Differences

Samsung M378B5673EH1-CF8 2GB Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 57
    Around 51% lower latency
A-DATA Technology AO1E34RCSV1-BF1S 16GB Reasons to consider
A-DATA Technology AO1E34RCSV1-BF1S 16GB
Report a bug
  • Faster reading speed, GB/s
    16.8 left arrow 12.7
    Average value in the tests
  • Faster write speed, GB/s
    13.7 left arrow 7.5
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 8500
    Around 3.01 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 57
  • Read speed, GB/s
    12.7 left arrow 16.8
  • Write speed, GB/s
    7.5 left arrow 13.7
  • Memory bandwidth, mbps
    8500 left arrow 25600
Other
  • Description
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    7-7-7-20 / 1066 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    1988 left arrow 2792

Samsung M378B5673EH1-CF8 2GB RAM comparisons

Nanya Technology M2X4G64CB8HG5N-DG 4GB
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A-DATA Technology AO1E34RCSV1-BF1S 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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