RAM comparison Samsung M378B5673FH0-CH9 2GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Samsung M378B5673FH0-CH9 2GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Overall score

Samsung M378B5673FH0-CH9 2GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M378B5673FH0-CH9 2GB

Reasons to consider
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Below the latency in the PassMark tests, ns

31 35

Around -13% lower latency
Faster reading speed, GB/s

20.5 14.4

Average value in the tests
Faster write speed, GB/s

15.5 9.5

Average value in the tests
Higher memory bandwidth, mbps

25600 10600

Around 2.42 higher bandwidth

Complete list of technical specifications

Samsung M378B5673FH0-CH9 2GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Main characteristics

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)

2321 3649

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns