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Samsung M378T5663QZ3-CF7 2GB
Chun Well Technology Holding Limited D4U0830160B 8GB

Samsung M378T5663QZ3-CF7 2GB vs Chun Well Technology Holding Limited D4U0830160B 8GB

Overall score
star star star star star
Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Overall score
star star star star star
Chun Well Technology Holding Limited D4U0830160B 8GB

Chun Well Technology Holding Limited D4U0830160B 8GB

Differences Specifications Comments

Differences

Samsung M378T5663QZ3-CF7 2GB Reasons to consider
Samsung M378T5663QZ3-CF7 2GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 17.4
    Average value in the tests
Chun Well Technology Holding Limited D4U0830160B 8GB Reasons to consider
Chun Well Technology Holding Limited D4U0830160B 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    32 left arrow 56
    Around -75% lower latency
  • Faster write speed, GB/s
    12.5 left arrow 1,813.5
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 6400
    Around 3.33 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378T5663QZ3-CF7 2GB
Chun Well Technology Holding Limited D4U0830160B 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    56 left arrow 32
  • Read speed, GB/s
    4,387.7 left arrow 17.4
  • Write speed, GB/s
    1,813.5 left arrow 12.5
  • Memory bandwidth, mbps
    6400 left arrow 21300
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    693 left arrow 3137

Samsung M378T5663QZ3-CF7 2GB RAM comparisons

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Chun Well Technology Holding Limited D4U0830160B 8GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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