Samsung M378T5663QZ3-CF7 2GB vs Hyundai Inc AR32C16S8K2SU416R 8GB

Overall score

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Overall score

Hyundai Inc AR32C16S8K2SU416R 8GB

Hyundai Inc AR32C16S8K2SU416R 8GB

Differences Specifications Comments

Differences

Samsung M378T5663QZ3-CF7 2GB

Reasons to consider
Samsung M378T5663QZ3-CF7 2GB

Faster reading speed, GB/s

4 19.4

Average value in the tests

Hyundai Inc AR32C16S8K2SU416R 8GB

Reasons to consider
Hyundai Inc AR32C16S8K2SU416R 8GB

Below the latency in the PassMark tests, ns

20 56

Around -180% lower latency
Faster write speed, GB/s

15.0 1,813.5

Average value in the tests
Higher memory bandwidth, mbps

17000 6400

Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M378T5663QZ3-CF7 2GB

Hyundai Inc AR32C16S8K2SU416R 8GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

56 20
Read speed, GB/s

4,387.7 19.4
Write speed, GB/s

1,813.5 15.0
Memory bandwidth, mbps

6400 17000

Other

Description

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

693 3395

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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