RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
Compare
Samsung M391B5673EH1-CH9 2GB vs Team Group Inc. TEAMGROUP-ED4-2400 16GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
Team Group Inc. TEAMGROUP-ED4-2400 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
85
Around 69% lower latency
Reasons to consider
Team Group Inc. TEAMGROUP-ED4-2400 16GB
Report a bug
Faster reading speed, GB/s
13.2
12.8
Average value in the tests
Faster write speed, GB/s
9.2
9.0
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
85
Read speed, GB/s
12.8
13.2
Write speed, GB/s
9.0
9.2
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2143
1838
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB RAM comparisons
Kingston 9905471-002.A00LF 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMV8GX4M1A2400C16 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMK16GX4M4B3866C18 4GB
Apacer Technology 78.01G86.9H50C 1GB
Shenzhen Xingmem Technology Corp 16GB
Kingston 9905469-143.A00LF 4GB
Crucial Technology CT16G4SFD824A.M16FD1 16GB
Samsung M393B1G70BH0-CK0 8GB
Ramaxel Technology RMUA5110MB78HAF-2400 8GB
A-DATA Technology AD73I1B1672EG 2GB
Corsair CM4X8GF2400C14K4 8GB
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F4-3600C14-16GVKA 16GB
Kingston 9965525-155.A00LF 8GB
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMD64GX4M4B3466C16 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
A-DATA Technology AD4U240038G17-BHYA 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston LV32D4S2S8HD-8 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N
Peak Electronics 256X64M-67E 2GB
Crucial Technology CT4G4DFS8266.C8FF 4GB
Samsung M393B1K70CH0-CH9 8GB
Kingston LV36D4U1S8HD-8XR 8GB
Report a bug
×
Bug description
Source link