RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B1G70BH0-CK0 8GB
Gloway International (HK) STK4U2133D15081C 8GB
Compare
Samsung M393B1G70BH0-CK0 8GB vs Gloway International (HK) STK4U2133D15081C 8GB
Overall score
Samsung M393B1G70BH0-CK0 8GB
Overall score
Gloway International (HK) STK4U2133D15081C 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B1G70BH0-CK0 8GB
Report a bug
Reasons to consider
Gloway International (HK) STK4U2133D15081C 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
51
Around -132% lower latency
Faster reading speed, GB/s
16.8
9.8
Average value in the tests
Faster write speed, GB/s
12.3
8.1
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B1G70BH0-CK0 8GB
Gloway International (HK) STK4U2133D15081C 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
51
22
Read speed, GB/s
9.8
16.8
Write speed, GB/s
8.1
12.3
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2208
3036
Samsung M393B1G70BH0-CK0 8GB RAM comparisons
TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB
Gloway International (HK) STK4U2133D15081C 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSO16GX4M1A2133C15 16GB
Kingston KHX1866C9D3/8GX 8GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
Samsung M3 91T2953GZ3-CF7 1GB
Samsung M471A1K43EB1-CWE 8GB
AMD R5316G1609U2K 8GB
Essencore Limited IM44GU48A30-FGGHAB 4GB
Samsung M393B1K70CH0-CH9 8GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
AMD AE34G1601U1 4GB
Kingmax Semiconductor GLLG42F-18---------- 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
OCMEMORY OCM2933CL16-16GBH 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
Kingston KF552C40-16 16GB
Kingston 9905711-015.A00G 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Micron Technology V-GeN D4V16GL24A8R 16GB
SK Hynix HMA82GS6AFR8N-UH 16GB
Samsung M471A1K43CB1-CRCR 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CM4X4GF2133C15S2 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
G Skill Intl F4-3000C14-16GVK 16GB
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Samsung M378A2K43EB1-CWE 16GB
Report a bug
×
Bug description
Source link