RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B2G70BH0-CH9 16GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
Compare
Samsung M393B2G70BH0-CH9 16GB vs Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
Overall score
Samsung M393B2G70BH0-CH9 16GB
Overall score
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B2G70BH0-CH9 16GB
Report a bug
Reasons to consider
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
Report a bug
Below the latency in the PassMark tests, ns
20
33
Around -65% lower latency
Faster reading speed, GB/s
18.9
8
Average value in the tests
Faster write speed, GB/s
14.6
7.3
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B2G70BH0-CH9 16GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
33
20
Read speed, GB/s
8.0
18.9
Write speed, GB/s
7.3
14.6
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 12 14 15
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1911
3022
Samsung M393B2G70BH0-CH9 16GB RAM comparisons
Samsung M393B1K70BH1-CH9 8GB
Essencore Limited KD48GU880-34A170X 8GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB RAM comparisons
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SpecTek Incorporated PSD34G13332 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B2G70BH0-CH9 16GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-4000C18-32GTRS 32GB
Crucial Technology CT51264BD160B.C16F 4GB
Kingston KHX2666C15D4/4G 4GB
Kingston KF552C40-16 16GB
G Skill Intl F4-3600C16-16GTZN 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Avant Technology J641GU42J7240ND 8GB
Crucial Technology BLS8G4D32AESBK.M8FE1 8GB
Crucial Technology BLS8G4D32AESBK.M8FE 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Kingston 9905622-051.A00G 8GB
SK Hynix HYMP125U64CP8-S6 2GB
Corsair CMD64GX4M4B2800C14 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT4G4DFS824A.C8FHP 4GB
Kingston KHX2400C11D3/4GX 4GB
INTENSO 4GB
Crucial Technology CT102464BA160B.M16 8GB
Kllisre D4 8G 8GB
Team Group Inc. Team-Elite-1333 4GB
Apacer Technology 78.CAGPP.ARW0B 8GB
Report a bug
×
Bug description
Source link