RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
en
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3200C14-8GTZR 8GB

Samsung M395T2863QZ4-CF76 1GB vs G Skill Intl F4-3200C14-8GTZR 8GB

Overall score
star star star star star
Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Overall score
star star star star star
G Skill Intl F4-3200C14-8GTZR 8GB

G Skill Intl F4-3200C14-8GTZR 8GB

Differences Specifications Comments

Differences

Samsung M395T2863QZ4-CF76 1GB Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 19.4
    Average value in the tests
  • Faster write speed, GB/s
    2,404.5 left arrow 15.6
    Average value in the tests
G Skill Intl F4-3200C14-8GTZR 8GB Reasons to consider
G Skill Intl F4-3200C14-8GTZR 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    26 left arrow 104
    Around -300% lower latency
  • Higher memory bandwidth, mbps
    17000 left arrow 6400
    Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3200C14-8GTZR 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    104 left arrow 26
  • Read speed, GB/s
    3,192.0 left arrow 19.4
  • Write speed, GB/s
    2,404.5 left arrow 15.6
  • Memory bandwidth, mbps
    6400 left arrow 17000
Other
  • Description
    PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    no data left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    786 left arrow 3756

Samsung M395T2863QZ4-CF76 1GB RAM comparisons

takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB

G Skill Intl F4-3200C14-8GTZR 8GB RAM comparisons

Apacer Technology AQD-D4U8GN24-SE 8GB
Corsair CMK64GX5M2B5200C40 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons

Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3200C14-8GTZR 8GB
G Skill Intl F4-3200C14-8GTZR 8GB
Memory RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
Memory RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
Hewlett-Packard 7EH68AA# 16GB
Hewlett-Packard 7EH68AA# 16GB
Memory RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Essencore Limited KD4AGS88A-26N1600 16GB
Essencore Limited KD4AGS88A-26N1600 16GB
Memory RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Tanbassh 8G 2666MHZ 8GB
Tanbassh 8G 2666MHZ 8GB
Memory RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
Crucial Technology CT16G4DFRA266.C8FE 16GB
Crucial Technology CT16G4DFRA266.C8FE 16GB
Memory RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Kingston 9905663-008.A00G 16GB
Kingston 9905663-008.A00G 16GB
Memory RAM
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
Memory RAM
Samsung M471B5773DH0-CK0 2GB
Samsung M471B5773DH0-CK0 2GB
G Skill Intl F4-3000C16-16GTZR 16GB
G Skill Intl F4-3000C16-16GTZR 16GB
Memory RAM
Patriot Memory (PDP Systems) PSD38G16002 8GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
SK Hynix HMT41GU6BFR8A-PB 8GB
SK Hynix HMT41GU6BFR8A-PB 8GB
Memory RAM
Samsung M3 78T6553CZ3-CD5 512MB
Samsung M3 78T6553CZ3-CD5 512MB
Maxsun MSD48G32Q3 8GB
Maxsun MSD48G32Q3 8GB
Memory RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
SK Hynix HMA851U6DJR6N-WM 4GB
SK Hynix HMA851U6DJR6N-WM 4GB
Memory RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M378A2K43DB1-CTD 16GB
Samsung M378A2K43DB1-CTD 16GB
Memory RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Samsung M378A5244CB0-CVF 4GB
Samsung M378A5244CB0-CVF 4GB
Memory RAM